Fujitsu Develops New Technology

Fujitsu Laboratories Ltd has developed a new high-reliability technology for high-power gallium nitride (GaN) high electron-mobility transistors (HEMTs), paving the way for commercialisation of high-power GaN HEMTs.

The new technology enables the transistors to operate even at the high temperature of 200 degrees Celsius for more than one million hours, equivalent to over 100 years, under pinch-off condition with a drain voltage of 50V, thereby enabling the world's longest lifecycle for GaN HEMTs.

Fujitsu will strive toward applying GaN HEMTs using this new technology for the high-speed wireless communications market, such as for satellite communication (VSATs), cellular base stations, WiMAX base stations, and other high-speed wireless communications infrastructure.

As wireless communication data-rates continue to become increasingly faster, power consumption in base stations - such as those for mobile phones – is also increasing. GaN HEMTs are promising as devices to realise lower power consumption for high-power amplifiers in next-generation high-speed wireless communication systems.

However, in order for GaN HEMTs to be used as high power, high voltage-endurance devices, they must maintain high reliability - a long lifespan – as it anticipated that they must withstand harsh usage conditions, including high temperatures and high drain voltages.

Fujitsu will continue with development for further advancements of GaN HEMTs for next-generation high-speed wireless communication.